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August 26, 2004

Toyota reports a silicon carbide breakthrough

Researchers at Toyota have created near perfect crystals of silicon carbide. The new matrial may eventually replace traditional silicon in semiconductors.

Takatori grows the silicon carbide crystals in several different stages. At each stage, further growth is only allowed on the cleanest face of the crystal. Hot silicon carbide vapour condenses on the crystal's flat face and defects are gradually eliminated as the crystals grow up to seven centimetres across. Takatori's crystals contain less than 1% of the number of defects found in a crystal produced by conventional methods.
(Continued at Ars Technica)


Posted by yatta at 02:10 PM